SM50GD120DN2E — 1200 V / 50 A IGBT Power Module

The BSM50GD120DN2E is an IGBT three-phase full-bridge power module designed for industrial power-conversion equipment. Rated for a 1.2 kV collector-emitter voltage and continuous currents in the 50–72 A range depending on operating conditions, the module integrates fast free-wheeling diodes in a package with an insulated metal base plate, making it suitable for inverter and drive topologies where compact, reliable switching stages are required.

This module is specified for medium-to-high power applications such as AC motor drives, photovoltaic inverters, UPS systems and general industrial automation. It is offered in an EconoPACK/EconoPACK2 style package with screw or press-in mounting variants and provides measured thermal characteristics (Ptot ≈ 350 W, low RthJC) and pulsed current capability useful for demanding load transients. These mechanical and thermal attributes support stable operation over wide ambient and junction temperature ranges.

Electrical characteristics include low saturation voltage (VCE(sat) typically around ~2.5 V per IGBT under specified conditions), input/output capacitances and well-documented turn-on/turn-off behavior suitable for modern gate-drive schemes. The module is stated as RoHS/lead-free and was produced under the former Siemens/EUPEC lineage now represented by Infineon product listings — consult the official datasheet for exact switching curves, thermal resistances, and recommended mounting/handling procedures. 

Key Specs

For full electrical characteristics, switching curves, thermal resistances, pin-out and mechanical drawings, please refer to the BSM50GD120DN2E Datasheet (PDF) — official product sheet and technical tables.