Infineon BSM50GD120DN2 1200V 50A 3 Phase Bridge IGBT Module

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BSM50GD120DN2 Power Module with Blue Insulator and Multiple Pins for Efficient Energy Switching
Infineon BSM50GD120DN2 1200V 50A 3 Phase Bridge IGBT Module
Regular price Rs.0.00

Infineon BSM50GD120DN2 IGBT Module — 1200 V, 50 A 3-Phase Bridge

The Infineon BSM50GD120DN2 is a silicon-based IGBT module tailored for 3-phase bridge configurations, offering a maximum collector–emitter voltage of 1.2 kV and a continuous current rating of 50 A—ideal for industrial and commercial power electronics applications. It supports efficient voltage-switching tasks in inverter systems, motor drives, and UPS circuits.

Built in an EconoPACK™ 2 format, this module including fast free-wheel diodes provides a space-efficient and thermally optimized solution. Its power dissipation capability of 350 W allows for high endurance under heavy loading scenarios. 

Constructed using Non-Punch Through (NPT) IGBT technology, the BSM50GD120DN2 ensures robust switching performance, with a collector–emitter saturation voltage around 2–2.5 V and support for pulsed currents up to 100 A

The module handles ambient conditions extending from –40 °C to +150 °C and employs an insulated baseplate to maintain safe operation across industrial environments. 

It is commonly utilized in motor-driven systems, inverter circuits, and other power conversion setups requiring compact, efficient switching components.


Key Specifications – Infineon BSM50GD120DN2

Specification Value
Collector–Emitter Voltage (V<sub>CE</sub>) 1 200 V (1.2 kV)
Continuous Collector Current (I<sub>C</sub>) 50 A
Pulsed Collector Current (1 ms) Up to 100 A
Power Dissipation (P<sub>d</sub>) 350 W
Package Type EconoPACK™ 2 (3-phase bridge)
Saturation Voltage (V<sub>CE(sat)</sub>) Ŧ 2–2.5 V (typical)
IGBT Technology Non-Punch Through (NPT)
Operating Temp Range –40 °C to +150 °C
Configuration 3-phase full bridge
Mounting Style Screw-mount baseplate
Typical Applications Inverters, motor drives, UPS

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