Infineon BSM50GD120DN2 1200V 50A 3 Phase Bridge IGBT Module
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Infineon BSM50GD120DN2 1200V 50A 3 Phase Bridge IGBT Module
Infineon BSM50GD120DN2 IGBT Module — 1200 V, 50 A 3-Phase Bridge
The Infineon BSM50GD120DN2 is a silicon-based IGBT module tailored for 3-phase bridge configurations, offering a maximum collector–emitter voltage of 1.2 kV and a continuous current rating of 50 A—ideal for industrial and commercial power electronics applications. It supports efficient voltage-switching tasks in inverter systems, motor drives, and UPS circuits.
Built in an EconoPACK™ 2 format, this module including fast free-wheel diodes provides a space-efficient and thermally optimized solution. Its power dissipation capability of 350 W allows for high endurance under heavy loading scenarios.
Constructed using Non-Punch Through (NPT) IGBT technology, the BSM50GD120DN2 ensures robust switching performance, with a collector–emitter saturation voltage around 2–2.5 V and support for pulsed currents up to 100 A.
The module handles ambient conditions extending from –40 °C to +150 °C and employs an insulated baseplate to maintain safe operation across industrial environments.
It is commonly utilized in motor-driven systems, inverter circuits, and other power conversion setups requiring compact, efficient switching components.
Key Specifications – Infineon BSM50GD120DN2
| Specification | Value |
|---|---|
| Collector–Emitter Voltage (V<sub>CE</sub>) | 1 200 V (1.2 kV) |
| Continuous Collector Current (I<sub>C</sub>) | 50 A |
| Pulsed Collector Current (1 ms) | Up to 100 A |
| Power Dissipation (P<sub>d</sub>) | 350 W |
| Package Type | EconoPACK™ 2 (3-phase bridge) |
| Saturation Voltage (V<sub>CE(sat)</sub>) | Ŧ 2–2.5 V (typical) |
| IGBT Technology | Non-Punch Through (NPT) |
| Operating Temp Range | –40 °C to +150 °C |
| Configuration | 3-phase full bridge |
| Mounting Style | Screw-mount baseplate |
| Typical Applications | Inverters, motor drives, UPS |
