Infineon BSM35GP120
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Infineon BSM35GP120
BSM35GP120
The BSM35GP120 is a rugged, high-voltage IGBT module designed for demanding industrial and commercial power-electronics applications. Built on proven Eupec/Infineon technology, the module delivers a 1200 V blocking capability with high continuous current handling, making it ideal for inverters, motor drives, UPS systems and brake-choppers where reliable switching and thermal stability are essential. The device’s compact modular package and low on-state voltage help reduce conduction losses and improve overall system efficiency.
Engineered for durability and repeatable performance in hostile environments, the BSM35GP120 offers robust thermal characteristics and well-defined switching behavior that simplify thermal management and gate-drive design. Its low gate leakage and controlled turn-on/turn-off times reduce electromagnetic interference and switching stress on downstream components, while the integrated free-wheeling/rectifier diodes support efficient energy recovery in regenerative systems. Those traits translate to longer service life, lower maintenance and predictable behaviour in industrial duty cycles.
System designers will value the module’s clear ratings and proven ruggedness for both new designs and field repairs. Typical use cases include three-phase motor drives, inverter stages for renewable and storage inverters, brake choppers and general power conversion building blocks where 1200 V blocking and multi-dozen ampere currents are required. For design verification and exact limits (thermal impedance, switching losses, RBSOA and recommended gate-resistor ranges) please consult the full Infineon (Eupec) datasheet linked below — it contains all test conditions, graphs and mechanical drawings required for safe integration.
Key specs (from the official datasheet)
| Parameter | Value |
|---|---|
| Part number | BSM35GP120 |
| Manufacturer / Brand | Eupec / Infineon. |
| Module type / topology | IGBT module (inverter / three-phase bridge family with integrated diodes) |
| Collector-Emitter blocking voltage (VCES) | 1200 V. |
| DC collector current (TC = 25°C, inverter) | 45 A. |
| DC collector current (TC = 80°C, nominal) | 35 A. |
| Repetitive peak collector current (tP = 1 ms) | 70 A (ICRM, inverter). |
| Total power dissipation (TC = 25°C) | 230 W (inverter rating). |
| Collector-Emitter saturation voltage VCE(sat) | Typ. 2.4 V at IC = 35 A, VGE = 15 V (see datasheet for temp dependence). |
| Gate-Emitter peak voltage | ±20 V. |
| Typical input capacitance (Cies) | ~1.0–1.5 nF (depending on measurement conditions). |
| Diode forward current (Tc = 80°C) | 35 A (inverter diode rating); rectifier/brake diode ratings differ by configuration — see datasheet. |
| Package / Case | EconoPIM / DB-PIM family (module outline and pin-out in datasheet). |
For more detailed information, graphs (switching energy vs. current, thermal impedance curves, RBSOA), mechanical drawings and absolute-maximum conditions, please refer to the official Infineon / Eupec datasheet:
Download the BSM35GP120 datasheet (PDF) — Infineon / Eupec (Mouser host).
