Infineon 40T65QES 650V 40A IGBT

40T65QES IGBT Module – 650V 40A Insulated Gate Bipolar Transistor

40T65QES is a 650V, 40A IGBT module designed for high-efficiency power switching in industrial and commercial systems. Manufactured by Infineon Technologies, this IGBT combines low conduction losses with fast switching speed, making it suitable for motor drives, industrial automation, solar inverters, and power conversion systems. Its planar IGBT structure allows for efficient switching with minimal heat generation, while the compact module package supports easy integration into dense circuit layouts.

With a maximum collector-emitter voltage of 650V and a continuous collector current of 40A, this IGBT ensures stable operation in high-power applications. It is designed for thermal reliability in harsh environments and supports high junction temperature operation, improving system endurance. The device is commonly used in inverter circuits, high-frequency power supplies, and electric motor controllers where precise switching and reduced energy loss are essential.

The 40T65QES IGBT module is suitable for engineers and procurement teams building scalable, efficient, and thermally stable power electronics for industrial and renewable energy systems.

Key Specs Voltage Rating: 650V Current Rating: 40A Continuous Technology: NPT IGBT (Non-Punch Through) Package: Discrete IGBT Module Switching Performance: Low Switching Losses, Fast Soft Switching Power Dissipation: High Thermal Efficiency with Low Saturation Voltage Applications: Solar Inverters, Motor Drives, Industrial Automation, UPS, Power Conversion Systems Brand: Infineon Technologies Compliance: RoHS & Pb-Free