Home GT50JR22 600V 50A IGBT Module TO-3P
GT50JR22 electronic component transistor with three metal legs from The Component Centre
Toshiba GT50JR22 silicon N-channel IGBT discrete transistor datasheet with features and pin configuration
Toshiba GT50JR22 semiconductor component technical specifications datasheet page with ratings and thermal characteristics
Toshiba GT50JR22 transistor electrical and dynamic characteristics datasheet with test circuits and marking details
Toshiba GT50JR22 transistor characteristics curves including collector current versus voltage graphs
Technical performance graphs and characteristics data for Toshiba GT50JR22 semiconductor device
Technical drawing and package dimensions of Toshiba GT50JR22 electronic component with measurements
GT50JR22 electronic component transistor with three metal legs from The Component Centre
Toshiba GT50JR22 silicon N-channel IGBT discrete transistor datasheet with features and pin configuration
Toshiba GT50JR22 semiconductor component technical specifications datasheet page with ratings and thermal characteristics
Toshiba GT50JR22 transistor electrical and dynamic characteristics datasheet with test circuits and marking details
Toshiba GT50JR22 transistor characteristics curves including collector current versus voltage graphs
Technical performance graphs and characteristics data for Toshiba GT50JR22 semiconductor device
Technical drawing and package dimensions of Toshiba GT50JR22 electronic component with measurements

GT50JR22 600V 50A IGBT Module TO-3P

Sale price Rs.350.00
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GT50JR22 electronic component transistor with three metal legs from The Component Centre

GT50JR22 600V 50A IGBT Module TO-3P

Rs.350.00

GT50JR22 600V 50A IGBT Module – TO‑3P Package

The GT50JR22 from Toshiba is a trench‑IGBT transistor with integrated freewheeling diode, rated at 600 V collector-emitter voltage and 50 A continuous current TME+15Toshiba Semiconductors+15The Component Centre+15RS Online+6All Transistors+6Utsource+6. The device delivers low saturation voltage in the range of 1.55 V to 2.2 V (typical), minimizing conduction losses during high-current operations.

The transistor supports fast switching, with typical turn-off fall time around 0.05 µs under Ic=50 A Mouser Electronics+1Mouser Electronics+1. Its TO‑3P through-hole package allows efficient heat dissipation and a maximum junction temperature of 175 °C, making it suitable for demanding environments.

Key Specs – GT50JR22 IGBT Collector‑Emitter Voltage (V\CES\): 600 V Collector Current (I\C\): 50 A Continuous Saturation Voltage (V\CE(sat)\): 1.55 V to 2.2 V (typical) Switching Speed (Fall Time): ~0.05 µs (typical at Ic = 50 A) Junction Temperature (T\j\): Up to 175 °C Package Type: TO‑3P (through-hole) Built-in Diode: Yes, internal freewheeling diode Applications: Medium‑power motor drives, inverters, UPS, induction heating, industrial control Compliance: RoHS Compatible MOQ: 30 pieces

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