Toshiba GT50JR22 600V 50A IGBT TO-3P
Regular price
Rs.350.00
Sale price
Rs.400.00
GT50JR22
The GT50JR22 from Toshiba is an N‑channel insulated‑gate bipolar transistor (IGBT) designed for 600 V collector‑emitter voltage and 50 A continuous collector current. It uses a 6.5th‑generation trench‑IGBT structure and incorporates a freewheeling diode monolithically within the chip. The module is packaged in a TO‑3P(N) through‑hole package, making it suitable for applications requiring robust mounting and effective heat dissipation.
Thanks to a low typical saturation voltage (V<sub>CE(sat)</sub> = 1.55 V at 50 A) the GT50JR22 reduces conduction losses during high‑current operation, improving overall efficiency.It also supports high‑speed switching: the typical turn‑off fall time is around 0.05 µs when I<sub>C</sub> = 50 A. Its internal freewheeling diode (FWD) shows a typical reverse recovery time (t<sub>rr</sub>) of ~0.35 µs (at I<sub>F</sub> = 15 A). The device supports a high maximum junction temperature up to 175 °C, which makes it viable for industrial‑grade environments and demanding power‑electronics use.
Typical use cases for GT50JR22 include current‑resonant inverter switching, motor drives, UPS systems, induction heating, and other applications in industrial control where a robust, high‑voltage, medium‑power IGBT with integrated diode and fast switching is required.
Key Specs
| Parameter | Specification |
|---|---|
| Collector‑Emitter Voltage (V<sub>CES</sub>) | 600 V |
| Continuous Collector Current (I<sub>C</sub>) | 50 A |
| Saturation Voltage (V<sub>CE(sat)</sub>) | 1.55 V (typical, I<sub>C</sub> = 50 A) |
| Switching Speed (Turn‑off Fall Time) | ~0.05 µs (typical, I<sub>C</sub> = 50 A) |
| Diode Reverse Recovery Time (free‑wheeling diode) | ~0.35 µs (typical, I<sub>F</sub> = 15 A) |
| Maximum Junction Temperature (T<sub>j</sub>) | 175 °C (max) |
| Maximum Collector Power Dissipation (P<sub>C</sub>) | 230 W |
| Package Type | TO‑3P(N) through‑hole, 3‑pin |
| Gate‑Emitter Voltage (V<sub>GE</sub> max) | ±25 V |
| Built‑in Component | Freewheeling Diode (integrated) |
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