Home GD50PIY120C5SN 50A 1200V STARPOWER IGBT Module

GD50PIY120C5SN 50A 1200V STARPOWER IGBT Module

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GD50PIY120C5SN 50A 1200V STARPOWER IGBT Module

GD50PIY120C5SN 50A 1200V STARPOWER IGBT Module

Rs.0.00

GD50PIY120C5SN STARPOWER 50A 1200V IGBT Module

The GD50PIY120C5SN is a high-performance IGBT module from STARPOWER Semiconductor, designed for demanding industrial and commercial power electronics applications. With a collector-emitter voltage of 1200V and a safe continuous collector current of 50A at 100°C, this module delivers consistent efficiency, durability, and thermal reliability. Its advanced trench IGBT technology minimizes conduction and switching losses, making it ideal for systems that require stable and efficient power management.

Built for robust performance, this module features a low inductance package and an isolated copper baseplate using Direct Bond Copper (DBC) technology for superior heat dissipation. Its positive temperature coefficient of the collector-emitter saturation voltage (VCE(sat)) ensures safe parallel operation and enhanced thermal stability. Designed to withstand short circuits up to 10μs, it provides reliable protection under challenging conditions.

Ideal for motor drives, AC/DC servo amplifiers, uninterruptible power supplies (UPS), and general-purpose inverters, the GD50PIY120C5SN offers industrial-grade durability, high efficiency, and flexible application potential. Its thermal stability and robust design make it suitable for both industrial automation and commercial power systems.

Key Specifications

Specification Value
Collector-Emitter Voltage (VCE) 1200V
Continuous Collector Current (IC) 50A @ 100°C
Collector-Emitter Saturation Voltage (VCE(sat)) 1.7V
Gate-Emitter Voltage (VGE) ±20V
Junction Temperature (Tj Max) 175°C
Power Dissipation (Pd) 292W
Module Type PIM (Press-fit)
Mounting Type Panel
IGBT Technology Trench IGBT
Short Circuit Capability 10μs


For more detailed information, please refer to the STARPOWER GD50PIY120C5SN Datasheet.

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