7MBR50U4P120-50 IGBT Module
The 7MBR50U4P120-50 is a robust IGBT (Insulated Gate Bipolar Transistor) module designed to meet the demanding requirements of modern power electronics applications. With a voltage rating of 1200V and a current rating of 50A, this module offers exceptional performance and reliability. Its compact package and low VCE(sat) ensure efficient operation, making it suitable for various industrial and commercial applications.
This module excels in applications such as inverters, converters, and power supplies, where high efficiency and durability are paramount. Its low conduction losses and fast switching capabilities contribute to reduced energy consumption and improved system performance. The 7MBR50U4P120-50's design also incorporates a converter diode bridge dynamic brake circuit, enhancing its versatility and suitability for a wide range of power electronic systems.
Built to withstand harsh operating conditions, the 7MBR50U4P120-50 can function effectively in environments with temperatures ranging from -40°C to +125°C. Its robust construction ensures long-term reliability, even under challenging thermal and electrical stresses. Whether used in industrial machinery, renewable energy systems, or commercial power supplies, this IGBT module delivers the efficiency, durability, and performance required for demanding applications.
Key Specs
| Specification | Value |
|---|---|
| Voltage Rating (VCES) | 1200V |
| Current Rating (IC) | 50A |
| Package Type | PIM |
| Mounting Type | PCB Mount |
| Operating Temperature | -40°C to +125°C |
| Gate Drive Voltage (VGE) | ±15V |
| Isolation Voltage (Viso) | 2500V |
| Mounting Screw Torque | 3.5 Nm |
| Weight | 200g (typical) |
For more detailed information, please refer to the Fuji Electric datasheet.
