FF450R12ME4_B11 1200 V, 675 A IGBT Module
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FF450R12ME4_B11 1200 V, 675 A IGBT Module
FF450R12ME4_B11 IGBT Power Module
The FF450R12ME4_B11 is a high-power IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies, designed for reliable operation in industrial and commercial applications. With a collector-emitter voltage rating of 1200 V and a continuous collector current of 675 A at 25°C, it supports high-power switching systems and is suitable for applications such as motor drives, UPS systems, induction heating, and welding equipment.
The module offers low conduction and switching losses, which reduce thermal stress and optimize energy efficiency. It operates reliably across a wide temperature range from -40°C to +150°C, ensuring stable performance in demanding industrial conditions.
The FF450R12ME4_B11 features a compact EconoDUAL™ 3 package with a screw-mount design, allowing easy integration into industrial setups. Its high current capability and thermal performance make it suitable for maintaining operational efficiency and minimizing downtime in critical applications.
Key Specifications:
| Specification | Value |
|---|---|
| Collector-Emitter Voltage (VCE) | 1200 V |
| Continuous Collector Current (IC) | 675 A |
| Pulsed Collector Current (ICp) | 1350 A |
| Gate-Emitter Voltage (VGE) | ±20 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.75 V (at 25°C) |
| Gate Threshold Voltage (VGE(th)) | 4.5–6.5 V |
| Power Dissipation (Ptot) | 2250 W |
| Operating Temperature (Tj) | -40°C to +150°C |
| Thermal Resistance (RthJC) | ≤0.045 K/W |
| Package Type | EconoDUAL™ 3 |
| Mounting Style | Screw Mount |
For more detailed information, please refer to the Infineon FF450R12ME4_B11 datasheet.
