BSM400GB120DN2 1200V, 400A IGBT module
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BSM400GB120DN2 1200V, 400A IGBT module
BSM400GB120DN2 IGBT Power Module
The BSM400GB120DN2 from Infineon Technologies is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed to deliver exceptional performance in demanding industrial and commercial applications. With a collector-emitter voltage rating of 1200V and a continuous collector current capability of 400A at 25°C, it ensures reliable and efficient operation in high-power switching systems. Its robust design supports applications such as motor drives, UPS systems, induction heating, and welding equipment.
This power module is engineered for efficiency and durability. Its low conduction and switching losses help reduce thermal stress while optimizing energy consumption, making it ideal for systems that require high reliability and consistent performance. The module is built to withstand harsh industrial conditions, operating smoothly across a wide temperature range from -40°C to +125°C, which enhances its long-term stability and lifespan.
The BSM400GB120DN2 combines versatility with ease of integration. Its high current handling capabilities, compact package, and screw-mount design allow seamless installation in various industrial setups. Engineers and system designers can rely on its consistent performance to maintain operational efficiency and minimize downtime in critical applications.
Key Specifications:
| Specification | Value |
|---|---|
| Collector-Emitter Voltage (VCE) | 1200 V |
| Continuous Collector Current (IC) | 400 A |
| Pulsed Collector Current (ICp) | 800 A |
| Gate-Emitter Voltage (VGE) | ±20 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 3.1 V (at 25°C) |
| Gate Threshold Voltage (VGE(th)) | 4.5–6.5 V |
| Power Dissipation (Ptot) | 2700 W |
| Operating Temperature (Tj) | -40°C to +125°C |
| Thermal Resistance (RthJC) | ≤0.045 K/W |
| Package Type | 62 mm |
| Mounting Style | Screw Mount |
For more detailed information, please refer to the Infineon BSM400GB120DN2 datasheet.
