Home BSM25GD120DN2 1200V 25A IGBT Full Bridge Module – Infineon

BSM25GD120DN2 1200V 25A IGBT Full Bridge Module – Infineon

Sale price Rs.0.00
In stock
Add to Wishlist Add to Compare
Frequently Bought Together
BSM25GD120DN2 1200V 25A IGBT Full Bridge Module – Infineon
This item: BSM25GD120DN2 1200V 25A IGBT Full Bridge Module – Infineon
Sale price Rs.0.00
Green printed circuit board held by hand for 5KVA power supply from The Component Centre
5KVA Solar Inverter PCB with Original TLP350H Optocoupler
Regular price Rs.3,700.00 Sale price Rs.3,500.00
Reel of TLP350H electronic components from The Component Centre in black and blue plastic packaging
Toshiba TLP350H 3750Vrms Gate Driver Optocoupler
Regular price Rs.210.00 Sale price Rs.185.00
Total price:
Regular total price Rs.3,910.00 PKR Sale total price Rs.3,685.00 PKR

Guarantee Safe Checkout

Visa
Mastercard
Google Pay
PayPal
Estimate delivery times 3-5 days (Pakistan-wide)
BSM25GD120DN2 1200V 25A IGBT Full Bridge Module – Infineon

BSM25GD120DN2 1200V 25A IGBT Full Bridge Module – Infineon

Rs.0.00

BSM25GD120DN2 — 1200 V IGBT Full-Bridge Module

The BSM25GD120DN2 is a full-bridge IGBT module developed for use in industrial and commercial power electronics. Built in an EconoPACK™2 insulated-base package, it combines low conduction losses with fast switching characteristics and integrated free-wheel diodes. Typical applications include three-phase inverters, motor drives, UPS systems, and power supplies.

This module is designed with stable thermal performance and consistent operating behaviour. It features low chip-to-case thermal resistance, rated power dissipation up to 200 W per IGBT, and reinforced isolation with a 2500 VAC test voltage. Gate threshold and switching data are specified to support correct gate-driver design and reliable operation under various load conditions.

The BSM25GD120DN2 is suitable for medium-power three-phase systems requiring 1200 V blocking capability. It can be used in equipment such as industrial motor controllers, UPS modules, and solar inverters. For complete electrical ratings, mechanical details, and design guidance, always refer to the official datasheet.

Key Specs

Parameter Value
Manufacturer Infineon Technologies
Part number BSM25GD120DN2
Module type 3-phase full-bridge IGBT with free-wheel diodes
Collector-Emitter Voltage (VCE) 1200 V
DC Collector Current (IC) 25 A (TC = 25 °C); 35 A (TC = 80 °C)
Pulsed Collector Current (ICpuls, 1 ms) 50 A (TC = 25 °C); 70 A (TC = 80 °C)
Collector-Emitter Saturation Voltage Typ. 2.5 V at IC = 25 A, VGE = 15 V, Tj = 25 °C
Power Dissipation per IGBT 200 W (TC = 25 °C)
Gate Threshold Voltage 4.5 – 6.5 V
Thermal Resistance (RthJC) IGBT ≤ 0.6 K/W; diode ≤ 1 K/W
Operating / Storage Temperature −55 … +150 °C
Package EconoPACK™2, insulated base
Isolation Test Voltage 2500 VAC, 1 min


For more detailed information, please refer to the Infineon datasheet (PDF).

SECURE PAYMENT

Accepts JazzCash, cash, bank transfers.

PAKISTAN-WIDE DELIVERY

Pakistan-wide delivery with fast overnight shipping via TCS, Leopards, etc.

CUSTOMER SERVICE

Team available Mon-Sat, responds in 30 mins.