2SK2611 900V 9A Silicon N Channel Transistor

2SK2611 MOSFET

The 2SK2611 MOSFET, an N-channel component from Toshiba, delivers superior performance for high-voltage applications up to 900V and 9A. Designed for robust power management, it excels in DC-DC converters, motor drives, and power supplies, making it ideal for industrial automation and renewable energy systems. Its reliable design ensures consistent performance in demanding environments, offering engineers a trusted solution for power electronics.

Key Performance Features

This component features low on-resistance of 1.1Ω at 10V gate-source voltage, minimizing conduction losses for high efficiency. Its fast switching speed supports high-frequency operations, while the TO-3PN package provides durability and excellent thermal management, operating reliably from -55°C to 150°C. High avalanche durability protects against transient voltages, ensuring long-term stability.

Applications in Industry

This semiconductor supports relay drivers, LED drivers, and high-voltage switching circuits. Its compatibility with standard logic levels simplifies integration, making it a top choice for manufacturers in automotive and clean energy sectors seeking efficient power solutions.

Technical Specifications

This N-channel component offers a drain-source voltage of 900V, continuous drain current of 9A, maximum on-resistance of 1.1Ω, and TO-3PN package. Order now for premium semiconductors with competitive bulk pricing and fast delivery.