2MBI300N-060 IGBT Power Module
The 2MBI300N-060 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module developed by Fuji Electric. Designed for demanding industrial and commercial applications, this module offers exceptional reliability and efficiency. With a collector-emitter voltage rating of 600V and a continuous collector current of 300A, it ensures stable operation in high-power switching systems. Its robust design supports applications such as motor drives, uninterruptible power supplies (UPS), and industrial machinery.
This IGBT module is engineered for efficiency and durability. Its low conduction and switching losses help reduce thermal stress while optimizing energy consumption, making it ideal for systems that require high reliability and consistent performance. The module operates reliably across a wide temperature range, ensuring stable performance in demanding industrial conditions.
The 2MBI300N-060 combines versatility with ease of integration. Its high current handling capabilities, compact package, and low inductance structure allow seamless installation in various industrial setups. Engineers and system designers can rely on its consistent performance to maintain operational efficiency and minimize downtime in critical applications.
Key Specifications:
Specification | Value |
---|---|
Collector-Emitter Voltage (VCE) | 600 V |
Continuous Collector Current (IC) | 300 A |
Collector-Emitter Saturation Voltage (VCE(sat)) | 1.85–2.1 V |
Gate-Emitter Voltage (VGE) | ±15 V |
Gate Threshold Voltage (VGE(th)) | 4.5–6.5 V |
Power Dissipation (Ptot) | 1040 W |
Operating Temperature (Tj) | -40°C to +150°C |
Thermal Resistance (RthJC) | 0.12 K/W |
Package Type | 2 in one-package |
Mounting Style | Screw Mount |
For more detailed information, please refer to the Fuji Electric 2MBI300N-060 datasheet.