K40T120 IGBT
The K40T120 IGBT from Infineon is a high-voltage, high-current power transistor designed for reliable operation in motor drives, solar inverters, UPS systems, EV inverters, and industrial power electronics. It has a 1200 V collector-emitter voltage rating and 40 A continuous current capacity. The TO‑247 package allows efficient heat dissipation, and the TrenchStop technology reduces switching and conduction losses for stable performance in demanding applications.
This IGBT supports high-frequency switching with low losses, helping maintain energy-efficient operation. It features a fast-recovery emitter-controlled diode, tight parameter distribution, and stable temperature behavior. Its design supports short-circuit withstand capability, low gate charge, and parallel operation, making it suitable for industrial and renewable energy systems.
The K40T120 is RoHS compliant and its TO‑247 packaging ensures reliable mounting and thermal management. It is suitable for applications where stable, efficient, and durable operation is required.
Key Specs
| Parameter | Specification |
|---|---|
| Collector‑Emitter Voltage (V<sub>CE</sub>) | 1200 V |
| Continuous Collector Current (I<sub>C</sub>) | 40 A (T<sub>C</sub>=100 °C) |
| Package Type | TO‑247 / PG‑TO‑247‑3 |
| Technology | TrenchStop / Fieldstop IGBT |
| Diode | Fast-recovery emitter-controlled diode |
| Short-Circuit Withstand Time | 10 µs |
| V<sub>CE(sat)</sub> (typical, @ I<sub>C</sub>=40 A, T<sub>j</sub>=25 °C) | ~1.7 V |
| Gate‑Emitter Voltage (V<sub>GE</sub> max) | ±20 V |
| Operating Junction Temperature | –40 °C … +150 °C |
| Thermal Resistance (junction-to-case) | ~0.45 K/W |
| Compliance | RoHS compliant |
