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Infineon IRGP4066D 600V 140A IGBT TO-247

Regular price Rs.450.00
Sale price Rs.500.00
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Infineon IRGP4066D 600V 140A IGBT TO-247
Infineon IRGP4066D 600V 140A IGBT TO-247
Regular price Rs.450.00
Sale price Rs.500.00

Infineon IRGP4066D

The IRGP4066D is an N-channel insulated-gate bipolar transistor (IGBT) designed for power electronics applications. With a collector-emitter voltage rating of 600 V and a continuous collector current of 140 A, it supports switching in motor drives, UPS inverters, renewable energy systems, and other medium- to high-power circuits. Its trench-gate design and integrated ultrafast diode provide low conduction losses and efficient switching, ensuring reliable operation under varying load conditions. For more detailed information, please refer to the Infineon IRGP4066D datasheet.

Housed in a TO-247AC/TO-247AD through-hole package, the IRGP4066D allows effective thermal management with a maximum junction temperature of 175 °C. Its low collector-emitter saturation voltage (typical 1.70 V at 25 °C) and fast switching speed (turn-on delay ~50 ns, turn-off ~200 ns) make it suitable for high-frequency switching applications.

The IRGP4066D operates reliably under continuous and pulsed loads, including short-circuit conditions. It is suitable for motor controllers, inverters, EV charging circuits, and energy conversion systems where robust electrical performance and thermal stability are required.

Key Specs

Parameter Specification
Collector‑Emitter Voltage (V<sub>CES</sub>) 600 V 
Continuous Collector Current (I<sub>C</sub>) @ 25 °C 140 A 
Pulsed Collector Current (I<sub>CM</sub>) 225 A 
Collector‑Emitter Saturation Voltage (V<sub>CE(on)</sub>) Typ. 1.70 V, Max 2.10 V @ 75 A, V<sub>GE</sub>=15 V
Maximum Power Dissipation (P<sub>D</sub>) 454 W
Gate Charge (Q<sub>g</sub>) 150 nC
Typical Switching Delays (Turn-on / Turn-off) ~50 ns / ~200 ns
Reverse Recovery Time (diode) ~155 ns
Operating Junction Temperature (T<sub>J</sub>) –55 °C to +175 °C
Package Type TO‑247AC / TO‑247AD
Gate‑Emitter Voltage (V<sub>GE</sub>) ±20 V

For full technical details and characteristic curves, see the official datasheet.

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