IRF3808
The IRF3808 is a high‑current N‑channel power MOSFET from Infineon Technologies, rated at 75 V and 140 A. Its low on‑resistance of 7 mΩ reduces conduction losses and improves switching efficiency, making it suitable for motor control circuits, DC‑DC converters, welding equipment, and high-current power supplies.
Using planar (HEXFET®) technology, the IRF3808 provides fast switching and a wide safe operating area. The TO‑220AB package supports reliable thermal performance, allowing continuous power dissipation up to 330 W at case temperature 25 °C and operation over a junction-temperature range of –55 °C to +175 °C.
The IRF3808 is suitable for industrial, automotive, and renewable energy applications where high current, low conduction losses, and stable switching are required. Its characteristics make it a practical choice for DC‑DC converters, motor drives, and high-current switching systems.
Key Specs
| Parameter | Specification |
|---|---|
| Drain‑Source Voltage (V_DSS) | 75 V |
| Continuous Drain Current (I_D @ Tc = 25 °C) | 140 A |
| Static Drain‑Source On‑Resistance (R_DS(on)) | 7 mΩ @ V_GS = 10 V |
| Package | TO‑220AB (Through‑Hole) |
| Maximum Power Dissipation (P_D @ Tc = 25 °C) | 330 W |
| Gate‑Source Voltage (V_GS max) | ±20 V |
| Operating Junction Temperature (T_j) | –55 °C to +175 °C |
| Pulsed Drain Current (I_D(pulse)) | up to 550 A |
| Recommended Applications | Motor control, DC‑DC converters, power supplies, welding equipment, high-current switching systems |
