Infineon IRF1407 75 V, 130 A N Channel MOSFET
Regular price
Rs.150.00
Sale price
Rs.155.00
IRF1407
The IRF1407 is a robust N‑channel HEXFET™ power MOSFET engineered to deliver outstanding performance in high-current, high-reliability applications. With a drain‑to‑source rating of 75 V and a continuous current capability of up to 130 A, this transistor excels in demanding switching environments. Thanks to its ultra-low on-resistance of 7.8 mΩ, it offers exceptional efficiency and minimal conduction losses, making it an ideal choice for power management in automotive, industrial, and commercial systems.
Built in a TO-220AB package, the IRF1407 provides excellent thermal handling and supports junction temperatures up to 175 °C, ensuring dependable operation even in harsh environments. Its total gate charge of 160 nC enables fast switching transitions, while robust design features such as dynamic dv/dt rating and repetitive avalanche tolerance make it a highly reliable device for high-power converters and motor control stages.
In practical terms, the IRF1407 is widely adopted across industrial and commercial power electronics: it is used in automotive electrical systems (particularly 42 V architectures), high-frequency inverters, renewable energy converters, UPS systems, and motor drive circuits. Engineers favor it for designing efficient, durable, and cost-effective switching solutions where high current handling and thermal resilience are required.
Key Specs
| Parameter | Value |
|---|---|
| Drain‑Source Voltage (V<sub>DS</sub>) | 75 V |
| Continuous Drain Current (I<sub>D</sub>) | 130 A |
| On-State Resistance (R<sub>DS(on)</sub>) | 0.0078 Ω (7.8 mΩ) |
| Total Gate Charge (Q<sub>g</sub>) | 160 nC |
| Maximum Power Dissipation (P<sub>D</sub>) | 330 W |
| Maximum Gate‑Source Voltage (V<sub>GS</sub>) | ± 20 V |
| Operating Junction Temperature (T<sub>j</sub>) | –55 °C to +175 °C |
| Package | TO-220AB |
| Typical Applications | Motor Control, Automotive Electronics, Power Supplies, UPS Systems |
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