Magnachip MBQ40T65QES 650V 80A IGBT TO-247
Regular price
Rs.350.00
Sale price
Rs.400.00
40T65QES — 650V Field-Stop Trench IGBT (Magnachip MBQ40T65QES)
The Magnachip MBQ40T65QES (40T65QES) is a 650 V Field-Stop Trench IGBT designed for high-speed switching and low conduction loss. Using Magnachip’s Field-Stop trench technology, it provides stable operation up to a junction temperature of 175°C and supports applications requiring reliable performance in power electronics.
The 40T65QES features a low collector-emitter saturation voltage of approximately 1.8 V at IC = 40 A (VGE = 15 V), continuous DC collector current up to 40 A at TC = 100°C, and pulsed current ratings up to 120 A, suitable for high-frequency switching and industrial converter systems. Its gate characteristics, including a total gate charge of ~60 nC, allow precise control in fast switching environments.
The device is suitable for inverters, welding converters, and high-frequency switching converters. It is supplied in a TO-247 package with a gate/collector/emitter configuration and is RoHS compliant. For full electrical characteristics, switching energy data, thermal ratings, and package drawings, refer to the official Magnachip datasheet.
For more detailed information, please refer to the Magnachip datasheet: MBQ40T65QES Datasheet.
Key Specs
| Parameter | Value |
|---|---|
| Manufacturer / Part Number | Magnachip — MBQ40T65QES |
| Device Type | 650 V Field-Stop Trench IGBT (TO-247) |
| Collector-Emitter Voltage (VCEO) | 650 V |
| DC Collector Current (TC = 25°C) | 80 A |
| DC Collector Current (TC = 100°C) | 40 A |
| Pulsed Collector Current (Icpuls) | 120 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | ~1.8 V typical at IC = 40 A, VGE = 15 V; up to 2.3 V at high Tj |
| Maximum Junction Temperature (Tj) | 175 °C |
| Power Dissipation (TC = 25°C) | 230 W |
| Power Dissipation (TC = 100°C) | 115 W |
| Thermal Resistance RθJC (IGBT) | 0.65 °C/W |
| Thermal Resistance RθJC (Diode) | 1.75 °C/W |
| Thermal Resistance RθJA | 40 °C/W |
| Total Gate Charge (Qg) | ~60 nC (VCE = 520 V, IC = 40 A, VGE = 15 V) |
| Gate-Emitter Charge (Qge) | ~13 nC |
| Gate-Collector Charge (Qgc) | ~25 nC |
| Turn-on/Turn-off (typ, Tj=25°C) | td(on) 6 ns, tr 36 ns, td(off) 55 ns, tf 64 ns |
| Switching Energy (typ) | Eon ≈ 0.5 mJ, Eoff ≈ 0.4 mJ, Ets ≈ 0.9 mJ (VCC=400 V, IC=40 A) |
| Diode Forward Voltage (IF = 20 A, Tj=25°C) | ~1.5 V |
| Diode Reverse Recovery (t_rr) | ~60 ns @ Tj=25°C (IF = 20 A, di/dt = 820 A/µs) |
| Gate-Emitter Voltage | ±20 V (maximum) |
| Operating Junction Temp. Range | −40 °C to +175 °C |
| Package / Pinout | TO-247 — G (Gate), C (Collector), E (Emitter) |
We dispatch all orders through Leopard Courier and TCS, while bulk or heavy shipments are sent via cargo (bilty) for safer handling and better rates. Standard delivery time is 2–3 working days for both courier and cargo deliveries, depending on your location. Orders are dispatched within 24 hours after payment confirmation, and the tracking number is shared on WhatsApp once shipped. Shipping charges depend on parcel weight and destination, and may be waived for bulk or corporate orders. Please ensure your contact details and address are accurate to avoid delays. For urgent delivery or specific shipping requirements, contact us directly on WhatsApp at 0303 56888 44.
Recently Viewed
People Also Bought
Here’s some of our most similar products people are buying. Add it to cart now
