Infineon 20N60C3 650V 20.7A MOSFET
Regular price
Rs.150.00
Sale price
Rs.165.00
Infineon 20N60C3
The Infineon 20N60C3 is a high-performance N‑channel CoolMOS™ power MOSFET designed for power‑electronics applications. With a drain‑source voltage (V<sub>DS</sub>) of up to 650 V and a continuous current rating of 20.7 A, this transistor provides reliable switching performance and thermal stability in systems such as SMPS (switched‑mode power supplies), solar inverters, motor drives, and telecom power supplies. Its design supports energy-efficient operation and stable performance under varying loads.
This MOSFET uses Infineon’s CoolMOS™ high-voltage technology, offering low on‑resistance (R<sub>DS(on)</sub>) and low gate charge, which reduce conduction and switching losses. It supports precise control in high-frequency power-conversion circuits, maintaining system efficiency and thermal stability. Its high dv/dt capability and avalanche robustness ensure reliable operation in demanding electrical environments.
Housed in the PG-TO-220 (TO‑220) package, the 20N60C3 enables effective heat dissipation and operates at junction temperatures up to 150 °C. The device is suitable for industrial and commercial installations requiring durable and efficient MOSFETs for power-electronics applications.
Key Specifications
| Specification | Value |
|---|---|
| Part Name | 20N60C3 (CoolMOS™) – Infineon |
| Type / Topology | N‑Channel Power MOSFET |
| Drain‑Source Voltage | 650 V (V<sub>DS</sub>, at T<sub>j,max</sub>) |
| Continuous Drain Current | 20.7 A (at T<sub>c</sub>=25 °C) |
| On‑Resistance (R<sub>DS(on)</sub>) | 0.19 Ω (V<sub>GS</sub>=10 V, ID=13.1 A, T<sub>j</sub>=25 °C) |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | Approx. 3.0 V – 3.9 V (1 mA) |
| Gate Charge (Q<sub>g</sub>) | Total: 87–114 nC (V<sub>DS</sub>=480 V, ID=20.7 A, V<sub>GS</sub>: 0→10V) |
| Input Capacitance (C<sub>iss</sub>) | ≈ 2400 pF (V<sub>DS</sub>=25 V, f=1 MHz) |
| Rise / Fall Times | Rise (t<sub>r</sub>): ~10 ns; Fall (t<sub>f</sub>): ~67–100 ns (typ.) |
| Package | PG‑TO‑220 (also variants TO‑262, TO‑220FP) |
| Thermal Resistance | Junction-to-case (R<sub>θJC</sub>): 0.6 K/W |
| Operating Junction Temp. | –55 °C to +150 °C |
| Compliance | RoHS compliant (Pb‑free) |
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