NCE82H140 IGBT Transistor is a high-performance power transistor designed for demanding industrial applications. With a Vds(on) of 82V and Id rated at 140A, this IGBT offers excellent efficiency and stability for power switching applications. Its low Rds(on) of 6mΩ (typical: 4.3mΩ) ensures minimal energy loss during operation, enhancing system efficiency. The transistor features advanced trench technology and low gate charge, making it ideal for hard-switched, high-frequency circuits, as well as uninterruptible power supplies (UPS).
The NCE82H140 is built with a special process technology that improves its ESD capability, ensuring reliable performance in even the most demanding conditions. Its high-density cell design guarantees low Rds(on) values, offering optimal energy efficiency and fast switching speeds. The device also comes with fully characterized avalanche voltage and current, ensuring reliability under high-stress conditions.
This IGBT transistor is 100% UIS tested and 100% AVds tested, ensuring that it performs reliably over time. It is housed in an excellent package for efficient heat dissipation, making it suitable for a variety of applications, from power switching to UPS systems.
The NCE82H140 IGBT Transistor is available across Pakistan, including Karachi, Lahore, Islamabad, Faisalabad, Multan, Peshawar, Quetta, and other cities.
A datasheet is included for detailed specifications.