K2611 N-Channel MOSFET is designed for high-efficiency switch-mode power supplies, offering reliable performance for a variety of applications. With a drain-source voltage of 900V and a drain current of 11A, this MOSFET features an ultra-low on-resistance of 1.1Ω (max) at VGS=10V, which helps minimize power losses and improve efficiency. The MOSFET is equipped with a gate charge of 72nC, ensuring fast switching speeds that are critical for high-performance circuits. This device is fully avalanche-tested, making it capable of handling high-energy pulses in avalanche and commutation modes.
The K2611 is ideal for applications requiring high voltage and efficiency, including switch-mode power supplies, motor control, and other power electronics. It is built using Winsemi's proprietary planar stripe DMOS technology to provide superior switching performance and withstand the harshest conditions. Available in the TO-247 package, this MOSFET is a great choice for various power electronics systems.
The K2611 is available across Pakistan, including Karachi, Lahore, Islamabad, Peshawar, Faisalabad, and more. Datasheet is available for detailed specifications.
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