11N40 400V 10.5 A N Channel Power MOSFET

11N40 (FQPF11N40C) 400 V 10.5 A N‑Channel Power MOSFET – TO‑220 Package

This device is a 400 V drain-source rated N‑channel enhancement-mode MOSFET that supports continuous drain current up to 10.5 A. It is built using Onsemi’s planar-stripe DMOS (QFET®) technology, offering low on-resistance, fast switching, and high avalanche energy capability.

Typical on-resistance is 0.43 Ω at V_GS = 10 V and I_D = 5.25 A. The MOSFET features a typical gate charge of 28 nC and low C_rss (~85 pF), enabling efficient switching in SMPS, PFC, and lighting ballast circuits. The part is 100% avalanche-tested and rated for power dissipation up to 135 W with a maximum junction temperature of +150 °C.

The FQPF11N40C variant housed in a TO‑220 full-pack package provides robust thermal handling and ease of mounting for mid-power power electronics designs.

Key specs Voltage Rating: 400 V Continuous Current: 10.5 A Technology: Planar-stripe DMOS (QFET®) Package: TO‑220 (through-hole) R_DSon: ~0.43 Ω @ V_GS = 10 V Gate Charge: ~28 nCC_rss: ~85 pF Power Dissipation: ~135 W Operating Temp: −55 °C to +150 °CAvalanche-tested: Yes Compliance: RoHS, Pb-Free

Ideal for SMPS, active PFC, electronic ballasts, motor controllers, and general-purpose power switching applications.