MJD45H11 Power Transistor is a dependable NPN transistor designed for general-purpose power and switching applications. It features a Collector-Emitter Voltage (VCEO) of 80V, a Collector Current (IC) of 8A, and a Power Dissipation (PD) of 20W, ensuring efficient and reliable performance across a wide range of circuits. Its robust TO-252 (D-PAK) package makes it suitable for surface-mount applications, providing compact and durable integration into modern electronic designs.
This transistor offers fast switching speeds, making it ideal for high-frequency circuits. Its low collector-emitter saturation voltage (VCE(sat)) reduces power loss, ensuring enhanced efficiency in critical operations. Designed for output or driver stages in switching regulators, converters, and power amplifiers, the MJD45H11 excels in demanding environments. With an operating junction temperature range of -55°C to +150°C, it guarantees reliable performance even in extreme conditions.
The MJD45H11 Power Transistor is available across Pakistan, including major cities such as Karachi, Lahore, Islamabad, Faisalabad, Multan, Peshawar, Quetta, and others. A detailed datasheet is attached for your convenience.