11N40 400V 10.5 A N Channel MOSFET
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Rs.170.00
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Rs.200.00
11N40 400V 10.5A N Channel MOSFET
The 11N40 (FQPF11N40C) 400 V 10.5 A N‑Channel Power MOSFET is a high-performance switching device designed for power electronics applications. Built using planar-stripe DMOS (QFET®) technology, it delivers low on-resistance and fast switching performance, making it suitable for SMPS (Switched-Mode Power Supplies), PFC (Power Factor Correction), lighting ballasts, motor drives, and other industrial power systems. Its robust design ensures consistent performance under thermal and electrical stress, providing reliable operation in both industrial and commercial environments. For detailed specifications, refer to the ON Semiconductor datasheet.
The 11N40 supports a continuous drain current of up to 10.5 A with a drain-source voltage rating of 400 V. It features a typical on-resistance of ~0.43 Ω at V<sub>GS</sub> = 10 V and I<sub>D</sub> = 5.25 A and a gate charge of approximately 28 nC, enabling efficient switching and reducing energy losses. The MOSFET also has a low reverse transfer capacitance of ~85 pF, which allows faster signal transitions and supports high-frequency operation.
Housed in a TO‑220 through-hole package, the FQPF11N40C offers effective thermal management and easy mounting. It is rated for power dissipation up to ~135 W and operates across a wide temperature range of –55 °C to +150 °C. The device is 100% avalanche-tested, ensuring reliable performance under voltage transients and heavy load conditions.
Key Specs
| Specification | Value |
|---|---|
| Part Number | FQPF11N40C (11N40) |
| Transistor Type | N‑Channel Power MOSFET |
| Drain‑Source Voltage (V<sub>DSS</sub>) | 400 V |
| Continuous Drain Current (I<sub>D</sub>) | 10.5 A |
| R<sub>DS(on)</sub> (Typ/Max) | ~0.43 Ω / 0.53 Ω @ V<sub>GS</sub> = 10 V, I<sub>D</sub> = 5.25 A |
| Technology | Planar-stripe DMOS (QFET®) |
| Gate Charge (Q<sub>g</sub>) | ~28 nC (typical) |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | ~85 pF |
| Power Dissipation (P<sub>D</sub>) | ~135 W |
| Operating Temperature Range (T<sub>J</sub>) | –55 °C to +150 °C |
| Avalanche Tested | Yes |
| Package | TO‑220 Through-Hole |
| Compliance | RoHS, Pb-Free |
For more detailed information, refer to the ON Semiconductor datasheet.
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