STD5NM50 N-Channel MOSFET in a TO-252 package is designed for high-performance power switching applications. With a drain-source voltage (VDSS) of 500V, a drain current (ID) of 7.5A, and a typical on-resistance (RDS(on)) of 0.72Ξ©, this MOSFET ensures efficient operation in demanding high-voltage circuits. Its low input capacitance and gate charge enable faster switching, reducing power losses and increasing system efficiency.
Engineered with high dv/dt and avalanche capabilities, the STD5NM50 delivers exceptional reliability, even under challenging conditions. The device is 100% avalanche-tested and features low gate input resistance, enhancing its overall performance and making it suitable for high-voltage converters, power density enhancement, and system miniaturization.
This MOSFET is ideal for applications requiring higher efficiencies and reliable performance. Available across Pakistan, including Karachi, Lahore, Islamabad, Faisalabad, Peshawar, and Multan.
Datasheet attached for detailed specifications.
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