NSI6602A Isolated Gate Driver

NSI6602A Isolated Gate Driver

NSI6602A is a high-performance isolated dual-channel gate driver IC from Novosense, designed to meet the demanding requirements of modern power electronics. It is specifically engineered for driving power transistors such as IGBTs and MOSFETs in applications including switching power supplies, DC-DC converters, motor drives, and more. With its robust feature set, the NSI6602A ensures reliable and efficient operation in a variety of industrial and commercial settings. NSI6602A Key Features The NSI6602A offers high isolation voltage, with options up to 5700Vrms depending on the package, ensuring safety in high-voltage applications. It supports fast switching speeds up to 2MHz, with a propagation delay as low as 25ns, which is essential for high-efficiency power conversion. The device also features a high common mode transient immunity (CMTI) of ±150kV/μs, providing excellent noise rejection for reliable operation in noisy environments. Additionally, it includes programmable deadtime to prevent shoot-through in half-bridge configurations, enhancing system safety. The NSI6602A is designed to operate over a wide temperature range from -40°C to 125°C, making it suitable for demanding applications such as automotive and industrial systems. It also incorporates undervoltage lockout (UVLO) protection for both input and output supplies, ensuring that the driver only operates within safe voltage ranges. Furthermore, it is available in multiple package options, including LGA13, SOP16 (300mil), SOP14 (300mil), and SOP16 (150mil), offering designers flexibility to meet their specific needs. Applications of NSI6602A The NSI6602A finds applications in various fields such as switching power supplies, DC-DC converters, motor drives, uninterruptible power supplies (UPS), solar inverters, battery chargers, industrial automation equipment, and telecommunications infrastructure. Its ability to handle high voltages and frequencies with low losses makes it particularly valuable in these areas.