NCEP85T16 N-Channel Super Trench Power MOSFET is a high-performance solution designed for efficient high-frequency switching and synchronous rectification. With advanced Super Trench technology, it minimizes conduction and switching losses through its ultra-low R<sub>DS(on)</sub> and Q<sub>g</sub>, making it ideal for demanding applications like DC/DC converters. Featuring a drain-source voltage (V<sub>DS</sub>) of 85V, a continuous drain current (I<sub>D</sub>) of 160A, and a low R<sub>DS(on)</sub> of 3.8mΩ at V<sub>GS</sub>=10V, this MOSFET delivers optimal performance with reduced power dissipation.
The NCEP85T16 excels in high-temperature environments with an operating temperature of up to 175°C. It is packaged in a TO-220-3L format and undergoes 100% UIS testing to ensure ruggedness and reliability. Absolute maximum ratings include a gate-source voltage (V<sub>GS</sub>) of ±20V, pulsed drain current (I<sub>DM</sub>) of 480A, and maximum power dissipation (P<sub>D</sub>) of 220W. This MOSFET is designed for high-frequency power supplies and synchronous rectification applications, ensuring efficiency and dependability.
Key features include a drain-source voltage (V<sub>DS</sub>) of 85V, continuous drain current (I<sub>D</sub>) of 160A, ultra-low on-resistance (R<sub>DS(on)</sub>) of 3.8mΩ, operating temperature up to 175°C, Pb-free construction, and 100% UIS testing.
This component is available across Pakistan, including Karachi, Lahore, Islamabad, and more. The datasheet is also attached for detailed technical specifications.
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