MRFE6VP61K25H Transistor

MRFE6VP61K25H Transistor

MRFE6VP61K25H Transistor powers high-performance RF systems with unmatched reliability. Designed by NXP Semiconductors, this wideband RF power LDMOS transistor delivers 1250W CW at 50V, operating efficiently across 1.8-600 MHz. Ideal for telecommunications, aerospace, defense, and industrial applications, it supports demanding RF power amplifiers in base stations, radar systems, and broadcasting equipment. Engineered for high efficiency and thermal stability, the MRFE6VP61K25H ensures consistent performance in mission-critical environments. Its robust design meets the needs of RF engineers and OEMs seeking dependable wideband RF components. This product is available on order only. To place an order, contact us at 0303-56888-44 for a quote or bulk inquiry.

MRFE6VP61K25H Transistor for Telecom And Beyond

The MRFE6VP61K25H Transistor excels in telecom RF solutions, offering high-power output for base stations and repeaters. Its 1250W capability and wide frequency range make it a top choice for engineers designing scalable RF systems. Procurement teams value its reliability and NXP’s reputation for quality.

Why Choose the MRFE6VP61K25H Transistor

This high-power RF transistor provides exceptional efficiency for RF power amplifiers. Its LDMOS technology ensures low power loss, making it ideal for aerospace and defense applications.