K75T60 IGBT

K75T60 IGBT For High-Power Applications

K75T60 IGBT, manufactured by Infineon Technologies, is a high-efficiency Insulated Gate Bipolar Transistor designed for demanding power electronics applications. This robust component, rated at 600V and 75A, excels in environments requiring high-voltage and high-current switching, such as solar inverters, motor drives, and uninterruptible power supplies. Featuring advanced TRENCHSTOP™ and Fieldstop technology, it offers a low VCE(sat) of 1.5V and a maximum junction temperature of 175°C, ensuring minimal power loss and exceptional thermal stability. Its fast-switching capabilities and soft, fast-recovery anti-parallel emitter-controlled HE diode make it ideal for industrial automation and renewable energy systems. The K75T60 IGBT’s three-terminal design, with a gate insulated by silicon dioxide, supports precise control in complex wave patterns using pulse width modulation. Engineers and procurement managers can rely on its JEDEC-qualified ruggedness and low EMI for consistent performance. ## K75T60 IGBT for High-Power Applications The K75T60 IGBT is engineered for applications requiring reliable power management. Its high current capability of 75A and pulsed collector current of 225A make it a top choice for industrial controllers and welding machines. The compact TO-247-3 package ensures compatibility with space-constrained designs, while its energy-efficient transistor design reduces operational costs. Whether for motor drives or renewable energy systems, this IGBT delivers unmatched durability and performance. ## Why Choose the K75T60 IGBT? This high-voltage IGBT stands out for its versatility and efficiency. It supports fast-switching IGBT requirements in UPS and switch-mode power supplies, ensuring stability under demanding conditions. Distributors and manufacturers benefit from its Pb-free, RoHS-compliant construction, aligning with modern environmental standards