K2611 900V 9A MOSFET

K2611 900V 9A MOSFET

K2611 MOSFET manufactured by Toshiba is a premier choice for engineers and electronics manufacturers seeking reliable and efficient power management solutions. This N-Channel MOSFET boasts impressive specifications including a drain-source voltage of up to 900V and a continuous drain current of 9A making it suitable for a wide range of high-power applications. Its low on-resistance (RDS(on) of 1.1Ω at VGS=10V) ensures minimal power loss while its fast switching speed makes it ideal for applications requiring quick response times. Key Features of K2611 MOSFET The K2611 offers high voltage and current ratings with a VDSS of 900V and ID of 9A designed for demanding power applications. Its low on-resistance typical RDS(on) of 1.1Ω at VGS=10V ensures minimal power loss during operation. The fast switching speed is ideal for applications requiring quick response times such as switching power supplies and motor controls. Encased in a TO-247 package it offers excellent thermal dissipation and mechanical strength. Applications The K2611 MOSFET is perfect for use in switching power supplies motor drives inverters DC-DC converters and lighting systems. Why Choose K2611 MOSFET Engineers and purchasing departments value the K2611 for its reliability performance and compatibility with a variety of electronic designs. Its high voltage capability and low on-resistance make it an efficient choice for power management in industrial and commercial settings.

Specifications

Type N-Channel MOSFET Package TO-247 VDSS 900V ID 9A (continuous) RDS(on) 1.1Ω (typ) at VGS=10V Gate Charge (Qg) 66nC (typ)