K1120 N-Channel MOSFET is a high-performance transistor designed to deliver reliable and efficient switching in demanding applications. With a drain-source voltage of 1000V and a drain current of 8A (DC) and 24A (Pulse), this MOSFET ensures robust operation in high-voltage circuits. Featuring a low on-resistance of 1.5Ξ© (typical), it minimizes power losses, while the high-speed switching capability enhances overall system efficiency.
This enhancement-mode MOSFET is ideal for DC-DC converters and motor drive applications, offering high forward transfer admittance, low leakage current, and a gate-source voltage of Β±20V. Built to operate reliably up to a maximum junction temperature of 150Β°C, it is packaged in the durable TO-3P format, ensuring easy integration into various designs.
Available across Pakistan, including Karachi, Lahore, Islamabad, Faisalabad, and Peshawar, the K1120 MOSFET is a dependable choice for engineers seeking superior performance and reliability. The datasheet is attached for detailed technical specifications.
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