K100E08N1 80V N-channel MOSFET

K100E08N1 80V N-channel MOSFET

K100E08N1 MOSFET is a high-efficiency N-channel transistor designed for demanding power management tasks. Engineered by Toshiba Semiconductor, this power MOSFET delivers a maximum drain-source voltage of 80V and a robust 100A drain current, making it ideal for applications like switching voltage regulators, motor control circuits, and DC-DC converters. With a low drain-source on-resistance of 3.2mΩ (at VGS = 10V), it ensures minimal power loss, enhancing system efficiency. Its TO-220 package supports reliable heat dissipation, and the 255W maximum power dissipation ensures durability in high-performance environments. The K100E08N1 N-channel MOSFET is 100% avalanche tested, guaranteeing robust performance for industrial automation, robotics, and renewable energy systems. Procurement teams and engineers trust this high-current MOSFET for its consistent quality and minimal lot-to-lot variations, making it a preferred choice for bulk orders in B2B settings. Why Choose K100E08N1 MOSFET for Your Projects? The K100E08N1 MOSFET stands out for its low on-resistance and high-current capabilities, enabling efficient power regulation in critical applications. Its enhancement mode (Vth = 2.0 to 4.0V) ensures precise control, while the 130nC total gate charge supports fast switching. This MOSFET for motor control and power supply circuits is built to handle demanding conditions, with a maximum junction temperature of 150°C and a rise time of 26nS, ensuring reliable operation. Applications of K100E08N1 MOSFET in Industry From automotive electronics to industrial machinery, the K100E08N1 power MOSFET excels in high-power environments. Its versatility suits switching regulators, motor drives, and amplifier circuits, providing engineers with a dependable solution for complex designs.