IRFB52N15D 150V N-Channel MOSFET

IRFB52N15D 150V N-Channel MOSFET

IRFB52N15D MOSFET, a 150V N-Channel Power MOSFET, offers exceptional performance for demanding B2B applications. Designed by Infineon Technologies, this HEXFET MOSFET features a low RDS(on) of 32mΩ, ensuring minimal power loss in high-current systems. With a continuous drain current of 51A and a maximum power dissipation of 230W, it excels in applications like DC-DC converters, motor drives, inverters, and power supplies. The TO-220AB package ensures compatibility with industry-standard designs, making it a reliable choice for engineers and procurement teams. Its fast switching speed and robust avalanche characteristics enhance efficiency in industrial automation and renewable energy systems. Whether you're designing high-frequency DC-DC converters or sourcing components for large-scale projects, the IRFB52N15D delivers unmatched reliability and performance. Why Choose IRFB52N15D MOSFET for Your Projects?

The IRFB52N15D N-Channel MOSFET specifications make it a top choice for engineers seeking high-efficiency MOSFET solutions. Its low gate charge of 60nC@10V reduces switching losses, optimizing performance in high-frequency applications. The planar cell structure ensures a wide safe operating area (SOA), ideal for rugged environments. This MOSFET is perfect for power management systems requiring low RDS(on) MOSFETs to minimize energy waste. Its 150V rating and high-current capability make it suitable for inverters, motor control, and renewable energy applications. Applications and Benefits of IRFB52N15D MOSFET

Engineers and distributors value the IRFB52N15D 150V MOSFET for DC-DC converters and other power-intensive applications. Its TO-220AB package supports wave soldering and high-current designs, simplifying integration into existing systems. The HEXFET technology ensures low gate-to-drain charge, enhancing efficiency in switching power supplies and industrial automation.