Home IRF740 400V 10A N-Channel POWER MOSFET
Multiple IRF740 electronic transistors with three pins and metal tabs on a soft surface
Fairchild IRF740 400V N-Channel MOSFET datasheet with technical specifications and pin diagram
Multiple IRF740 electronic transistors with three pins and metal tabs on a soft surface
Fairchild IRF740 400V N-Channel MOSFET datasheet with technical specifications and pin diagram

IRF740 400V 10A N-Channel POWER MOSFET

Sale price Rs.75.00
Variant: Original
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Multiple IRF740 electronic transistors with three pins and metal tabs on a soft surface
This item: IRF740 400V 10A N-Channel POWER MOSFET
Sale price Rs.75.00
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Multiple IRF740 electronic transistors with three pins and metal tabs on a soft surface

IRF740 400V 10A N-Channel POWER MOSFET

IRF740 is a high-performance N-channel Power MOSFET engineered for high-voltage applications in power electronics, offering robust performance for demanding circuits. With a drain-source voltage rating of 400V and a continuous drain current of 10A, this MOSFET is well-suited for power supplies, motor drives, and DC-DC converters. Its low on-resistance (RDS(on)) of 0.55 ohms at VGS=10V ensures efficient power transfer, minimizing energy losses and heat generation. This efficiency makes the IRF740 an ideal choice for applications requiring reliable switching, such as inverters and industrial automation systems.

Encased in a durable TO-220 package, the IRF740 provides excellent thermal management, allowing integration with heatsinks for enhanced heat dissipation. The TO-220 package is widely compatible with standard circuit board designs, making it a versatile component for both prototype and production environments. Operating within a temperature range of -55°C to +150°C, the IRF740 maintains performance in harsh conditions, ensuring reliability in applications like uninterruptible power supplies (UPS) and high-power LED drivers.

The IRF740’s fast switching capabilities, with a rise time of 27ns and a fall time of 24ns, support high-frequency operations, which are critical for modern power electronics. These characteristics reduce switching losses, enhancing overall system efficiency in applications such as audio amplifiers and battery management systems. The MOSFET’s gate threshold voltage of 2V to 4V requires a 10V gate drive for optimal performance, which may necessitate a driver circuit when paired with standard microcontroller outputs.

For engineers designing high-voltage circuits, the IRF740 offers additional flexibility with its ability to handle pulsed currents up to 40A. This feature is particularly valuable for applications with transient power demands, such as motor control and solenoid drivers. The combination of low on-resistance and a robust TO-220 package ensures minimal power loss and dependable operation, making it a cost-effective solution for high-power designs across industries.

The IRF740 MOSFET is a trusted component for professionals seeking to optimize power electronics projects. Its high voltage tolerance, efficient switching, and durable packaging make it suitable for renewable energy systems, including solar inverters and wind turbine controllers. By integrating the IRF740, designers can achieve reliable, high-performance circuits that meet the stringent demands of industrial and consumer electronics applications.

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