IRF640 MOSFET 18A 200V TO220 The Component Centre Pakistan

This N-Channel Enhancement Mode Power MOSFET is designed for high-power, high-speed applications. It offers a drain-source voltage (Vds) range of 150-200V and a current capacity (Id) of 18A, ensuring exceptional performance in demanding circuits. The low Rds(on) reduces power loss, while the ±20V gate-source voltage (Vgs) rating enhances its versatility.

Featuring silicon gate technology for fast switching speeds, it performs reliably even at elevated temperatures. Rugged and built for durability, this MOSFET is ideal for applications requiring low drive requirements and ease of paralleling. Suitable for power supplies, motor drives, and high-speed switching applications.

Available across Pakistan, including Karachi, Lahore, Islamabad, Faisalabad, and Peshawar. Datasheet attached for detailed specifications. Contact us for bulk orders