IRGP4068DPBF IGBT Power Transistor is a high-efficiency, rugged power switching device designed to meet the demands of modern industrial applications. With a collector-emitter voltage (Vces) of 600V and a collector current (Ic) of 48A at 100Β°C, this transistor is built to handle high-power conditions reliably. It features a low Vce(on) of 1.65V (typical), minimizing power loss and enhancing efficiency in systems requiring low switching losses.
Optimized for induction heating and soft switching applications, the IRGP4068DPBF utilizes low Vce(on) trench IGBT technology, delivering superior performance with ultra-low VF hyperfast diodes that reduce EMI and improve transient performance. With a short circuit SOA of 5Β΅s and a maximum junction temperature of 175Β°C, this transistor is designed to withstand demanding conditions, offering increased durability and reliability. Additionally, it is tested for 4x the rated current (ILM) to ensure consistent operation across all environments.
This IGBT is packaged in a lead-free TO-247AC or TO-247AD package, offering excellent thermal dissipation and suitability for parallel operation with superior current sharing. Available throughout Pakistan, including Karachi, Lahore, Islamabad, Faisalabad, and Peshawar, the IRGP4068DPBF is perfect for engineers seeking reliable and efficient power switching solutions.
The datasheet is attached for more technical details.
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