80H65 IGBT 650V

Overview of 80H65 IGBT 650V

80H65 IGBT 650V, specifically the STGW80H65DFB-4 model from STMicroelectronics, is a cutting-edge Insulated Gate Bipolar Transistor designed to meet the rigorous demands of modern industrial applications. With a maximum collector-emitter voltage of 650V and a continuous collector current of 120A, this IGBT is engineered for high-power switching with exceptional efficiency and reliability. Its key specifications include a pulsed collector current of 240A, a maximum on-state voltage of 2V at 15V gate-emitter voltage and 80A collector current, and a maximum power dissipation of 469W. The switching performance is highlighted by a turn-on energy of 2.1mJ and turn-off energy of 1.5mJ, with a gate charge of 414nC. The device exhibits fast switching with turn-on and turn-off delays of 84ns and 280ns respectively at 25°C under standard test conditions. Additionally, it features a reverse recovery time of 85ns and is housed in a TO-247 package, making it easy to integrate into various designs.

Applications of 80H65 IGBT 650V

The versatility of the 80H65 IGBT 650V makes it suitable for a wide range of applications. It is commonly used in motor drives to control high-power motors in industrial machinery, ensuring precise speed and torque control. In the renewable energy sector, it plays a crucial role in solar inverters, efficiently converting DC power from solar panels to AC power for the grid. For critical systems requiring uninterrupted power, it is employed in uninterruptible power supplies (UPS) to provide reliable backup power. Welding machines benefit from its ability to deliver precise power control, essential for high-quality welds. In industrial settings, it powers various equipment through stable and efficient industrial power supplies. Furthermore, in transportation, it is utilized in traction systems for electric vehicles and trains, contributing to efficient and sustainable mobility.

Why Choose 80H65 IGBT 650V?

When selecting a power semiconductor for your project, the 80H65 IGBT 650V stands out for several reasons. Its high efficiency, achieved through low on-state voltage and fast switching times, minimizes power losses, leading to energy savings and reduced heat generation. The reliability is ensured by its advanced trench and field stop technology, which provides consistent performance over extended periods. The TO-247 package is a standard form factor, making it straightforward to incorporate into existing designs without additional complexity. Moreover, it offers excellent value for money, providing top-tier performance at a competitive price point. For engineers and procurement specialists seeking a dependable and efficient solution for their power conversion needs, the 80H65 IGBT 650V is an ideal choice.