80H65 650V 80A High Speed Trench Gate IGBT

80H65 is a high-performance trench gate field-stop IGBT from STMicroelectronics, engineered for superior efficiency in power electronics. This high-voltage transistor boasts a 650V collector-emitter breakdown voltage and an 80A current rating, making it a top choice for industrial applications. Its low V_CE(sat) of 1.6V minimizes power loss, ensuring high efficiency in high-speed switching tasks. Housed in a durable TO-247 package, the 80H65 operates reliably at temperatures up to 175°C, delivering robust performance for demanding systems like solar inverters and motor drives.

Reliable and Versatile Performance

Designed for versatility, this IGBT offers fast recovery and tight parameter distribution, ensuring consistent operation in high-power environments. The 80H65 supports safe paralleling, making it ideal for complex setups like UPS systems, welding equipment, and renewable energy solutions. With a maximum power dissipation of 469W, this power transistor provides durability and cost-effectiveness, helping engineers achieve efficient circuit designs with minimal energy waste. Its rugged design ensures long-term reliability, even in challenging conditions.

Why Choose 80H65 for Your Projects?

Whether you’re designing power supplies, motor control systems, or renewable energy converters, this IGBT delivers exceptional performance. The 80H65 combines advanced trench gate technology with high current capacity, making it a go-to solution for professionals seeking efficiency and precision. For detailed technical specifications, refer to the datasheet.