GD75PIY120C6S IGBT Power Module
The GD75PIY120C6S is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for demanding industrial and commercial power electronics applications. With a collector-emitter voltage rating of 1200V and a continuous collector current of 75A at 25°C, this module ensures reliable operation in high-power switching tasks. Its compact design and efficient thermal management make it suitable for space-constrained systems.
Utilizing trench field-stop technology, the GD75PIY120C6S offers low collector-emitter saturation voltage, reducing conduction losses and ensuring stable switching performance. The module's robust construction, featuring a copper baseplate using Direct Bonded Copper (DBC) technology, enhances thermal conductivity and mechanical strength, making it ideal for applications requiring consistent power handling and long-term reliability.
Typical applications for the GD75PIY120C6S include motor drives, inverters, uninterruptible power supplies (UPS), and renewable energy systems. Its electrical and thermal characteristics make it suitable for systems requiring consistent power handling and reliability.
Key Specifications
| Feature | Specification |
|---|---|
| Collector-Emitter Voltage (Vceo) | 1200V |
| Continuous Collector Current (Ic) | 75A @ 25°C |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 1.7V – 2.15V |
| Gate-Emitter Voltage (Vge) | ±20V |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Power Dissipation (Pd) | 380W |
| Package Type | Module |
| Technology | Trench Field-Stop IGBT |
| Applications | Motor Drives, Inverters, UPS, Renewable Energy Systems |
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