GT50JR22 600V 50A IGBT Module – TO‑3P Package
The GT50JR22 from Toshiba is a trench‑IGBT transistor with integrated freewheeling diode, rated at 600 V collector-emitter voltage and 50 A continuous current TME+15Toshiba Semiconductors+15The Component Centre+15RS Online+6All Transistors+6Utsource+6. The device delivers low saturation voltage in the range of 1.55 V to 2.2 V (typical), minimizing conduction losses during high-current operations.
The transistor supports fast switching, with typical turn-off fall time around 0.05 µs under Ic=50 A Mouser Electronics+1Mouser Electronics+1. Its TO‑3P through-hole package allows efficient heat dissipation and a maximum junction temperature of 175 °C, making it suitable for demanding environments.
Key Specs – GT50JR22 IGBT Collector‑Emitter Voltage (V\CES\): 600 V Collector Current (I\C\): 50 A Continuous Saturation Voltage (V\CE(sat)\): 1.55 V to 2.2 V (typical) Switching Speed (Fall Time): ~0.05 µs (typical at Ic = 50 A) Junction Temperature (T\j\): Up to 175 °C Package Type: TO‑3P (through-hole) Built-in Diode: Yes, internal freewheeling diode Applications: Medium‑power motor drives, inverters, UPS, induction heating, industrial control Compliance: RoHS Compatible MOQ: 30 pieces
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